Pattern Generator——Pharos Ex
To meet the demands of nanoscale electron beam lithography systems, Beijing Goldenscope Technology Co., Ltd. has recently launched the independently developed Pharos Ex Pattern Generator System. The pattern generator is the core component of an electron beam lithography system, utilizing a Field-Programmable Gate Array (FPGA) as the central processor. It converts vector graphic data into electron beam lithography data, and through a specially designed digital-to-analog conversion circuit, it transforms digital signals into high-precision analog signals. These signals drive the scanning electron microscope’s deflection system to perform multi-path scanning of the electron beam.
The Pharos Ex captures images of standard samples and performs linear distortion correction of the writing field, including adjustments for scanning field gain, rotation, and displacement. The pattern generator controls the opening and closing of the beam shutter and, in conjunction with a high-precision X-Y nanometer stage, enables field stitching and overlay with stitching and overlay accuracy better than 100 nm.
(1)Pattern Stitching Accuracy: ≤ ±100 nm (High-precision displacement stage required).
(2)Pattern Overlay Accuracy: ≤ ±100 nm (High-precision displacement stage required).
(3)Scanning Speed: Up to 20 MHz.
(4)Line Width Measurement: Better than 50 nm, depending on the type of SEM (field emission scanning electron microscope).
(5)High-Precision Piezoelectric Displacement Stage: Included.
(6)Optional: Electron beam shutter and controller, with signal switching speed better than 50 ns.
Professional Systematic Training
Rich Application Experience
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